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                           Philips Semiconductors Product specification Damper diode BY329X-1500, BY329X-1500S fast, high-voltage ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ?C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V both terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from both terminals f = 1 MHz - 10 - pF to external heatsink THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-hs Thermal resistance junction to with heatsink compound - - 4.8 K/W heatsink without heatsink compound - - 5.9 K/W Thermal resistance junction to in free air. - 55 - K/W ambient Rth j-a STATIC CHARACTERISTICS Tj = 25 ?C unless otherwise stated SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BY329X- 1500 1500S 1500 1500S VF Forward voltage IF = 6.5 A 1.1 1.3 1.45 1.6 V IF = 6.5 A; T j = 125 ?C 1.05 1.2 1.35 1.5 V Reverse current VR = 1300 V - 250 - 250 μA VR = 1300 V; T j = 125 ?C - 1 - 1 mA IR DYNAMIC CHARACTERISTICS Tj = 25 ?C unless otherwise stated SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BY329X 1500 1500S 1500 1500S trr Reverse recovery time IF = 1 A; V R ≥ 30 V; 0.18 0.13 0.23 0.16 dIF/dt = 50A/μs μs Q Vs t fr fr Reverse recovery charge IF = 2 A; -dI F/dt = 20 A/μs 1.6 0.7 2.0 0.95 Peak forward recovery voltage IF = 6.5A; dI F/dt = 50A/μs 17233040V Forward recovery time IF = 6.5A; dI F/dt = 50A/μs 210 220 300 320 ns μC September 1998 2 Rev 1.100 |